2N90L-TN3-R MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N90L-TN3-R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 2.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.2 Ohm
Package: TO252
2N90L-TN3-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N90L-TN3-R Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technologyspecialized in allowing a minimum on-state resistance andsuperior switching performance. It also can withstand high energy
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