All MOSFET. 2N90G-TN3-R Datasheet

 

2N90G-TN3-R MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2N90G-TN3-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 2.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.2 Ohm
   Package: TO252

 2N90G-TN3-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N90G-TN3-R Datasheet (PDF)

 ..1. Size:268K  utc
 2n90l-ta3-t 2n90g-ta3-t 2n90l-tf3-t 2n90g-tf3-t 2n90l-tm3-t 2n90g-tm3-t 2n90l-tn3-r 2n90g-tn3-r 2n90l-tnd-r 2n90g-tnd-r.pdf

2N90G-TN3-R 2N90G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technologyspecialized in allowing a minimum on-state resistance andsuperior switching performance. It also can withstand high energy

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top