All MOSFET. 2N90G-TND-R Datasheet

 

2N90G-TND-R Datasheet and Replacement


   Type Designator: 2N90G-TND-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.2 Ohm
   Package: TO252
 

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2N90G-TND-R Datasheet (PDF)

 ..1. Size:268K  utc
 2n90l-ta3-t 2n90g-ta3-t 2n90l-tf3-t 2n90g-tf3-t 2n90l-tm3-t 2n90g-tm3-t 2n90l-tn3-r 2n90g-tn3-r 2n90l-tnd-r 2n90g-tnd-r.pdf pdf_icon

2N90G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 2N90 Power MOSFET 2A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N90 is an N-channel mode power MOSFET using UTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technologyspecialized in allowing a minimum on-state resistance andsuperior switching performance. It also can withstand high energy

Datasheet: 2N90G-TA3-T , 2N90L-TF3-T , 2N90G-TF3-T , 2N90L-TM3-T , 2N90G-TM3-T , 2N90L-TN3-R , 2N90G-TN3-R , 2N90L-TND-R , SKD502T , 2P50L-AA3-R , 2P50G-AA3-R , 2P50L-TN3-R , 2P50G-TN3-R , 30N06L-TA3-T , 30N06G-TA3-T , 30N06L-TF1-T , 30N06G-TF1-T .

Keywords - 2N90G-TND-R MOSFET datasheet

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