2P50L-AA3-R MOSFET. Datasheet pdf. Equivalent
Type Designator: 2P50L-AA3-R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 6.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11.5 nC
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 59 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
Package: SOT223
2P50L-AA3-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2P50L-AA3-R Datasheet (PDF)
..1. Size:477K utc
2p50l-aa3-r 2p50g-aa3-r 2p50l-tn3-r 2p50g-tn3-r.pdf
2p50l-aa3-r 2p50g-aa3-r 2p50l-tn3-r 2p50g-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2P50 POWER MOSFET -2A, -500V P-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252The UTC 2P50 is a P-channel MOS Field Effect Transistor. it uses UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC 2P50 is suitable for high voltage switching applications. 1 FEATURES SOT-
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
