All MOSFET. 2P50G-AA3-R Datasheet

 

2P50G-AA3-R Datasheet and Replacement


   Type Designator: 2P50G-AA3-R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 11.5 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: SOT223
 

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2P50G-AA3-R Datasheet (PDF)

 ..1. Size:477K  utc
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2P50G-AA3-R

UNISONIC TECHNOLOGIES CO., LTD 2P50 POWER MOSFET -2A, -500V P-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252The UTC 2P50 is a P-channel MOS Field Effect Transistor. it uses UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC 2P50 is suitable for high voltage switching applications. 1 FEATURES SOT-

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK644 | AON3613

Keywords - 2P50G-AA3-R MOSFET datasheet

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