All MOSFET. 2P50G-AA3-R Datasheet

 

2P50G-AA3-R MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2P50G-AA3-R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 6.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.5 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 59 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: SOT223

 2P50G-AA3-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2P50G-AA3-R Datasheet (PDF)

 ..1. Size:477K  utc
 2p50l-aa3-r 2p50g-aa3-r 2p50l-tn3-r 2p50g-tn3-r.pdf

2P50G-AA3-R 2P50G-AA3-R

UNISONIC TECHNOLOGIES CO., LTD 2P50 POWER MOSFET -2A, -500V P-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252The UTC 2P50 is a P-channel MOS Field Effect Transistor. it uses UTCs advanced technology to provide the customers with high switching speed and a minimum on-state resistance. The UTC 2P50 is suitable for high voltage switching applications. 1 FEATURES SOT-

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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