FDD8778 Datasheet. Specs and Replacement

Type Designator: FDD8778  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO252 DPAK

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FDD8778 substitution

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FDD8778 datasheet

 ..1. Size:358K  fairchild semi
fdd8778 fdu8778.pdf pdf_icon

FDD8778

May 2006 FDD8778/FDU8778 tm N-Channel PowerTrench MOSFET 25V, 35A, 14m Features General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It has ... See More ⇒

 8.1. Size:310K  fairchild semi
fdd8770 fdu8770.pdf pdf_icon

FDD8778

March 2006 FDD8770/FDU8770 N-Channel PowerTrench MOSFET 25V, 35A, 4.0m General Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has bee... See More ⇒

 9.1. Size:308K  fairchild semi
fdd8796 fdu8796.pdf pdf_icon

FDD8778

March 2006 FDD8796/FDU8796 N-Channel PowerTrench MOSFET 25V, 35A, 5.7m General Description Features Max rDS(on) = 5.7m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be... See More ⇒

 9.2. Size:418K  fairchild semi
fdd8782 fdu8782.pdf pdf_icon

FDD8778

November 2009 FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11m General Description Features Max rDS(on) = 11.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be... See More ⇒

Detailed specifications: FDD86102, STT01N20, FDD86102LZ, STT01L10, FDD86250, FDD86326, FDD8647L, FDD8770, IRFB3607, FDD8780, FDD8782, FDD8796, FDD8870, STT01L07, FDD8870F085, STS8816, FDD8874

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