All MOSFET. FDD8778 Datasheet

 

FDD8778 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD8778

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 39 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 35 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 12.6 nC

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: TO252 DPAK

FDD8778 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD8778 Datasheet (PDF)

0.1. fdd8778 fdu8778.pdf Size:358K _fairchild_semi

FDD8778
FDD8778

May 2006FDD8778/FDU8778tmN-Channel PowerTrench MOSFET 25V, 35A, 14mFeatures General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It has

8.1. fdd8770 fdu8770.pdf Size:310K _fairchild_semi

FDD8778
FDD8778

March 2006FDD8770/FDU8770N-Channel PowerTrench MOSFET 25V, 35A, 4.0mGeneral Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has bee

 9.1. fdd8782 fdu8782.pdf Size:418K _fairchild_semi

FDD8778
FDD8778

November 2009FDD8782/FDU8782N-Channel PowerTrench MOSFET 25V, 35A, 11mGeneral Description Features Max rDS(on) = 11.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be

9.2. fdd8796 fdu8796.pdf Size:308K _fairchild_semi

FDD8778
FDD8778

March 2006FDD8796/FDU8796N-Channel PowerTrench MOSFET 25V, 35A, 5.7mGeneral Description Features Max rDS(on) = 5.7m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be

 9.3. fdd8750.pdf Size:342K _fairchild_semi

FDD8778
FDD8778

December 2006FDD8750tmN-Channel PowerTrench MOSFET 25V, 2.7A, 40mFeatures General Description Max rDS(on) = 40m at VGS = 10V, ID = 2.7AThis N-Channel MOSFET has been designed specifically to improve the overall effciency of DC/DC converters using either Max rDS(on) = 60m at VGS = 4.5V, ID = 2.7Asynchronous or conventional switching PWM controllers.It has Low g

9.4. fdd8780 fdu8780.pdf Size:314K _fairchild_semi

FDD8778
FDD8778

March 2006FDD8780/FDU8780N-Channel PowerTrench MOSFET 25V, 35A, 8.5mGeneral Description Features Max rDS(on) = 8.5m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 12.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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