3N80L-TM3-T Datasheet. Specs and Replacement

Type Designator: 3N80L-TM3-T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm

Package: TO251

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3N80L-TM3-T datasheet

 ..1. Size:265K  utc
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3N80L-TM3-T

UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3.0 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ... See More ⇒

Detailed specifications: 3N80L-TA3-T, 3N80G-TA3-T, 3N80L-TF3-T, 3N80G-TF3-T, 3N80L-TF1-T, 3N80G-TF1-T, 3N80L-TF2-T, 3N80G-TF2-T, IRF3205, 3N80G-TM3-T, 3N80L-TMS4-R, 3N80G-TMS4-R, 3N80L-TN3-R, 3N80G-TN3-R, 40N15L-TA3-T, 40N15G-TA3-T, 40N15L-TF1-T

Keywords - 3N80L-TM3-T MOSFET specs

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