3N80L-TM3-T Datasheet and Replacement
Type Designator: 3N80L-TM3-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 57 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: TO251
3N80L-TM3-T substitution
3N80L-TM3-T Datasheet (PDF)
3n80l-ta3-t 3n80g-ta3-t 3n80l-tf3-t 3n80g-tf3-t 3n80l-tf1-t 3n80g-tf1-t 3n80l-tf2-t 3n80g-tf2-t 3n80l-tm3-t 3n80g-tm3-t 3n80l-tms4-r 3n80g-tms4-r 3n80l-tn3-r 3n80g-tn3-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 3N80 Power MOSFET 3.0 Amps, 800Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
Datasheet: 3N80L-TA3-T , 3N80G-TA3-T , 3N80L-TF3-T , 3N80G-TF3-T , 3N80L-TF1-T , 3N80G-TF1-T , 3N80L-TF2-T , 3N80G-TF2-T , IRFZ44N , 3N80G-TM3-T , 3N80L-TMS4-R , 3N80G-TMS4-R , 3N80L-TN3-R , 3N80G-TN3-R , 40N15L-TA3-T , 40N15G-TA3-T , 40N15L-TF1-T .
History: AOD2606 | NVMFD5853N | BSB017N03LX3 | UT2316G-AE3-R | AP97T07AGP-HF | AM10P10-530I | IPB80N06S2L-11
Keywords - 3N80L-TM3-T MOSFET datasheet
3N80L-TM3-T cross reference
3N80L-TM3-T equivalent finder
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3N80L-TM3-T replacement
History: AOD2606 | NVMFD5853N | BSB017N03LX3 | UT2316G-AE3-R | AP97T07AGP-HF | AM10P10-530I | IPB80N06S2L-11



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