All MOSFET. 4N65KL-TF3T-T Datasheet

 

4N65KL-TF3T-T MOSFET. Datasheet pdf. Equivalent


   Type Designator: 4N65KL-TF3T-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO220F

 4N65KL-TF3T-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

4N65KL-TF3T-T Datasheet (PDF)

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