4N65KL-TF3T-T - параметры транзистора MOSFET, его аналоги, datasheet

4N65KL-TF3T-T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: 4N65KL-TF3T-T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 34 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.8 Ohm
   Тип корпуса: TO220F

Аналог (замена) для 4N65KL-TF3T-T

4N65KL-TF3T-T Datasheet (PDF)

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UNISONIC TECHNOLOGIES CO., LTD 4N65K-TC Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications

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UNISONIC TECHNOLOGIES CO., LTD 4N65K-MT Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio

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UNISONIC TECHNOLOGIES CO., LTD 4N65K-TA Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65K-TA is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applicatio

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UNISONIC TECHNOLOGIES CO., LTD 4N65K Power MOSFET 4.0A, 650V N-CHANNEL POWER MOSFET 1 1TO-220FTO-220F1 DESCRIPTION The UTC 4N65K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high 1rugged avalanche characteristic. This power MOSFET is 1usually used in high spee

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