4N70G-T2Q-T Specs and Replacement

Type Designator: 4N70G-T2Q-T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 106 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO262

4N70G-T2Q-T substitution

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4N70G-T2Q-T datasheet

 ..1. Size:269K  utc
 4n70l-ta3-t 4n70g-ta3-t 4n70l-tf1-t 4n70g-tf1-t 4n70l-tf3-t 4n70g-tf3-t 4n70l-tm3-t 4n70g-tm3-t 4n70l-tn3-r 4n70g-tn3-r 4n70l-t2q-t 4n70g-t2q-t.pdf pdf_icon

4N70G-T2Q-T

UNISONIC TECHNOLOGIES CO., LTD 4N70 Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F DESCRIPTION The UTC 4N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching 1 1 time, low gate charge, low on-state resistance and high rugged TO-252 avalanche. This high speed switching power MOSFET is usually TO-220... See More ⇒

Detailed specifications: 4N70G-TF1-T, 4N70L-TF3-T, 4N70G-TF3-T, 4N70L-TM3-T, 4N70G-TM3-T, 4N70L-TN3-R, 4N70G-TN3-R, 4N70L-T2Q-T, AON7506, 4N80L-TA3-T, 4N80G-TA3-T, 4N80L-TF1-T, 4N80G-TF1-T, 4N80L-TF2-T, 4N80G-TF2-T, 4N80L-T2Q-T, 4N80G-T2Q-T

Keywords - 4N70G-T2Q-T MOSFET specs

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