All MOSFET. FDD8896F085 Datasheet

 

FDD8896F085 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDD8896F085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 80 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Drain Current |Id|: 94 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 46 nC
   Maximum Drain-Source On-State Resistance (Rds): 0.0057 Ohm
   Package: TO252 DPAK

 FDD8896F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD8896F085 Datasheet (PDF)

 7.1. Size:567K  fairchild semi
fdd8896 fdu8896.pdf

FDD8896F085 FDD8896F085

April 2008FDD8896 / FDU8896tmN-Channel PowerTrench MOSFET30V, 94A, 5.7mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been opt

 7.2. Size:1029K  fairchild semi
fdd8896 f085.pdf

FDD8896F085 FDD8896F085

January 2012FDD8896_F085N-Channel PowerTrench MOSFET30V, 94A, 5.7mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 6.8m, VGS = 4.5V, ID = 35Acontrollers. It has been optimized fo

 7.3. Size:496K  onsemi
fdd8896-f085.pdf

FDD8896F085 FDD8896F085

FDD8896-F085FeaturesN-Channel PowerTrench MOSFET30V, 94A, 5.7m rDS(ON) = 5.7m, VGS = 10V, ID = 35AGeneral Description rDS(ON) = 6.8m, VGS = 4.5V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using High performance trench technology for extremely loweither synchronous or conventional switchi

 7.4. Size:925K  cn vbsemi
fdd8896.pdf

FDD8896F085 FDD8896F085

FDD8896www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOL

Datasheet: FDD8878 , STS6601 , FDD8880 , STS6415 , FDD8882 , STS6409 , FDD8896 , STS6308 , IRF730 , STS4622 , FDD8N50NZ , FDG1024NZ , FDG327N , FDG327NZ , FDG328P , FDG330P , FDG332PZ .

 

 
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