FDD8896F085 Datasheet. Specs and Replacement

Type Designator: FDD8896F085  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 94 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm

Package: TO252 DPAK

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FDD8896F085 datasheet

 7.1. Size:567K  fairchild semi
 fdd8896 fdu8896.pdf pdf_icon

FDD8896F085

April 2008 FDD8896 / FDU8896 tm N-Channel PowerTrench MOSFET 30V, 94A, 5.7m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.8m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been opt... See More ⇒

 7.2. Size:1029K  fairchild semi
 fdd8896 f085.pdf pdf_icon

FDD8896F085

January 2012 FDD8896_F085 N-Channel PowerTrench MOSFET 30V, 94A, 5.7m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.7m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 6.8m , VGS = 4.5V, ID = 35A controllers. It has been optimized fo... See More ⇒

 7.3. Size:496K  onsemi
 fdd8896-f085.pdf pdf_icon

FDD8896F085

FDD8896-F085 Features N-Channel PowerTrench MOSFET 30V, 94A, 5.7m rDS(ON) = 5.7m , VGS = 10V, ID = 35A General Description rDS(ON) = 6.8m , VGS = 4.5V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventional switchi... See More ⇒

 7.4. Size:925K  cn vbsemi
 fdd8896.pdf pdf_icon

FDD8896F085

FDD8896 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ABSOL... See More ⇒

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Detailed specifications: FDD8878, STS6601, FDD8880, STS6415, FDD8882, STS6409, FDD8896, STS6308, 4N60, STS4622, FDD8N50NZ, FDG1024NZ, FDG327N, FDG327NZ, FDG328P, FDG330P, FDG332PZ

Keywords - FDD8896F085 MOSFET specs

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