FDG327N MOSFET Datasheet: N-Ch, 20V, 1.5A. Full specification with pinout and replacement list

FDG327N Specs and Replacement

Type Designator: FDG327N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V

Qg ⓘ - Total Gate Charge: 4.5 nC

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SC70

FDG327N substitution

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FDG327N datasheet

..1. Size:79K fairchild semi
fdg327n.pdf pdf_icon

October 2001 FDG327N 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V. specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 V converters using either synchronous or conventional RDS(ON) = 140 m @ VGS = 1.8 V switching PWM controllers. It h... See More ⇒

..2. Size:193K onsemi
fdg327n.pdf pdf_icon

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

0.1. Size:492K fairchild semi
fdg327nz.pdf pdf_icon

August 2008 FDG327NZ 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V. specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 V converters using either synchronous or conventional RDS(ON) = 140 m @ VGS = 1.8 V switching PWM controllers. It has been... See More ⇒

9.1. Size:76K fairchild semi
fdg328p.pdf pdf_icon

October 2000 FDG328P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in 1.5 A, 20 V. RDS(ON) = 0.145 @ VGS = 4.5 V a rugged gate version of Fairchild Semiconductor s RDS(ON) = 0.210 @ VGS = 2.5 V advanced PowerTrench process. It has been optimized for power management a... See More ⇒