FDG6318P Datasheet. Specs and Replacement

Type Designator: FDG6318P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm

Package: SC70

  📄📄 Copy 

FDG6318P substitution

- MOSFET ⓘ Cross-Reference Search

 

FDG6318P datasheet

 ..1. Size:123K  fairchild semi
fdg6318p.pdf pdf_icon

FDG6318P

January 2003 FDG6318P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode 0.5 A, 20 V. RDS(ON) = 780 m @ VGS = 4.5 V MOSFET are produced using Fairchild Semiconductor s RDS(ON) = 1200 m @ VGS = 2.5 V advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This... See More ⇒

 0.1. Size:159K  fairchild semi
fdg6318pz.pdf pdf_icon

FDG6318P

January 2003 FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode -0.5A, -20V. rDS(ON) = 780m (Max)@ VGS = -4.5 V MOSFET are produced using Fairchild Semiconductor s rDS(ON) = 1200m (Max) @ VGS = -2.5 V especially tailored to minimize on-state resistance. This Very low level gate drive requirements allowing... See More ⇒

 8.1. Size:344K  fairchild semi
fdg6317nz.pdf pdf_icon

FDG6318P

May 2009 FDG6317NZ Dual 20v N-Channel PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed 0.7 A, 20 V. RDS(ON) = 400 m @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 550 m @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized use Gate-So... See More ⇒

 8.2. Size:149K  fairchild semi
fdg6316p.pdf pdf_icon

FDG6318P

December 2001 FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 0.7 A, 12 V. RDS(ON) = 270 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 360 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 650 m @ ... See More ⇒

Detailed specifications: FDG330P, FDG332PZ, FDG410NZ, FDG6301NF085, FDG6306P, FDG6308P, FDG6316P, FDG6317NZ, 7N60, FDG6318PZ, FDG6320C, STS4501, FDG6321C, STS4300, FDG6322C, STS400, FDG6332C

Keywords - FDG6318P MOSFET specs

 FDG6318P cross reference

 FDG6318P equivalent finder

 FDG6318P pdf lookup

 FDG6318P substitution

 FDG6318P replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility