2SK2514 MOSFET Datasheet: N-Ch, 60V, 50A. Full specification with pinout and replacement list

2SK2514 Specs and Replacement

   Type Designator: 2SK2514
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 390 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO3P

2SK2514 substitution

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2SK2514 datasheet

..1. Size:89K 1
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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2514 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2514 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high current switching applications. 4.7 MAX. FEATURES 15.7 MAX. 3.2 0.2 1.5 Super Low On-Resistance 4 RDS (on)1 15 m (VGS = 10 V, ID = 25 A) RDS (on)2 23... See More ⇒

8.1. Size:119K 1
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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2515 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2515 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high current switching applications. 4.7 MAX. FEATURES 15.7 MAX. 3.2 0.2 1.5 Super Low On-Resistance 4 RDS (on)1 = 9 m (VGS = 10 V, ID = 25 A) RDS (on)2 = 14 m ... See More ⇒

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2512 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2512 is N-Channel MOS Field Effect Transistor designed (in millimeter) for high current switching applications. FEATURES 10.0 0.3 4.5 0.2 3.2 0.2 Low On-Resistance 2.7 0.2 RDS (on)1 = 15 m (VGS = 10 V, ID = 23 A) RDS (on)2 = 23 m (V... See More ⇒