7NM65G-TF3-T Datasheet and Replacement
Type Designator: 7NM65G-TF3-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 238 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO220F
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7NM65G-TF3-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 7NM65 Power MOSFET 7.0A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 7NM65 is a Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 7NM65 is universally applied in electronic lamp ballasts based on half bri
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UNISONIC TECHNOLOGIES CO., LTD 7NM65 Power MOSFET 7.0A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 7NM65 is a Super Junction MOSFET Structure. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. The UTC 7NM65 is universally applied in electronic lamp ballasts based on half bri
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: RQJ0602EGDQS | BUZ305 | 2N4119 | IXFN48N50U2 | IRF7807 | WSF4022 | RQJ0304DQDQS
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History: RQJ0602EGDQS | BUZ305 | 2N4119 | IXFN48N50U2 | IRF7807 | WSF4022 | RQJ0304DQDQS
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