8N60KL-TF1-T Datasheet and Replacement
Type Designator: 8N60KL-TF1-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 89 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220F
8N60KL-TF1-T substitution
8N60KL-TF1-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 8N60K-MT Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed swi
swt38n60k.pdf

SW38N60K N-channel Enhanced mode TO-247 MOSFET Features BVDSS : 600V TO-247 ID : 38A High ruggedness Low RDS(ON) (Typ 0.084)@VGS=10V RDS(ON) :0.084 Low Gate Charge (Typ 96nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application:ChargerLEDUPSServicer 1. Gate 2. Drain 3. Source 3 General Description
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HMS8N60I, HMS8N60KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applicati
Datasheet: 7NM70G-TM3-T , 7NM70L-TMS2-T , 7NM70G-TMS2-T , 7NM70L-TMN2-T , 7NM70G-TMN2-T , 7NM70G-TN3-R , 8N60KL-TA3-T , 8N60KG-TA3-T , TK10A60D , 8N60KG-TF1-T , 8N60KL-TF2-T , 8N60KG-TF2-T , 8N60KL-TF3-T , 8N60KG-TF3-T , 8N60KL-TF3T-T , 8N60KG-TF3T-T , 8N60L-TA3-T .
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