8N60KL-TF1-T MOSFET Datasheet: N-Ch, 600V, 8A. Full specification with pinout and replacement list

8N60KL-TF1-T Specs and Replacement

   Type Designator: 8N60KL-TF1-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 89 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220F

8N60KL-TF1-T substitution

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8N60KL-TF1-T datasheet

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HMS8N60I, HMS8N60K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industry s ID 8 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicati... See More ⇒

Detailed specifications: 7NM70G-TM3-T , 7NM70L-TMS2-T , 7NM70G-TMS2-T , 7NM70L-TMN2-T , 7NM70G-TMN2-T , 7NM70G-TN3-R , 8N60KL-TA3-T , 8N60KG-TA3-T , IRF1010E , 8N60KG-TF1-T , 8N60KL-TF2-T , 8N60KG-TF2-T , 8N60KL-TF3-T , 8N60KG-TF3-T , 8N60KL-TF3T-T , 8N60KG-TF3T-T , 8N60L-TA3-T .