8N60L-TF2-T Specs and Replacement
Type Designator: 8N60L-TF2-T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60.5 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220F
8N60L-TF2-T substitution
- MOSFET ⓘ Cross-Reference Search
8N60L-TF2-T datasheet
8n60l-ta3-t 8n60g-ta3-t 8n60l-tf1-t 8n60g-tf1-t 8n60l-tf2-t 8n60g-tf2-t 8n60l-tf3-t 8n60g-tf3-t 8n60l-t2q-t 8n60g-t2q-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 8N60 Power MOSFET 8A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app... See More ⇒
irfps38n60l.pdf
PD - 94630 SMPS MOSFET IRFPS38N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 120m 170ns 38A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate c... See More ⇒
irfps38n60l sihfps38n60l.pdf
IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness ... See More ⇒
irfps38n60l irfps38n60lpbf sihfps38n60l.pdf
IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.12 RoHS* Lower Gate Charge Results in Simple Drive COMPLIANT Qg (Max.) (nC) 320 Requirements Qgs (nC) 85 Enhanced dV/dt Capabilities Offer Improved Ruggedness ... See More ⇒
Detailed specifications: 8N60KL-TF3-T, 8N60KG-TF3-T, 8N60KL-TF3T-T, 8N60KG-TF3T-T, 8N60L-TA3-T, 8N60G-TA3-T, 8N60L-TF1-T, 8N60G-TF1-T, 4N60, 8N60G-TF2-T, 8N60L-TF3-T, 8N60G-TF3-T, 8N60L-T2Q-T, 8N60G-T2Q-T, 8N65KL-TA3-T, 8N65KG-TA3-T, 8N65KL-TF3-T
Keywords - 8N60L-TF2-T MOSFET specs
8N60L-TF2-T cross reference
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8N60L-TF2-T replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
