8N80G-TA3-T Specs and Replacement

Type Designator: 8N80G-TA3-T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm

Package: TO220

8N80G-TA3-T substitution

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8N80G-TA3-T datasheet

 ..1. Size:253K  utc
8n80l-ta3-t 8n80g-ta3-t 8n80l-tf3-t 8n80g-tf3-t 8n80l-tf1-t 8n80g-tf1-t 8n80l-tf2-t 8n80g-tf2-t.pdf pdf_icon

8N80G-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche a... See More ⇒

Detailed specifications: 8N65KG-TF3T-T, 8N65KL-TM3-T, 8N65KG-TM3-T, 8N65KL-TMS-T, 8N65KG-TMS-T, 8N65KL-TN3-R, 8N65KG-TN3-R, 8N80L-TA3-T, 7N60, 8N80L-TF3-T, 8N80G-TF3-T, 8N80L-TF1-T, 8N80G-TF1-T, 8N80L-TF2-T, 8N80G-TF2-T, 9N90L-TC3-T, 9N90G-TC3-T

Keywords - 8N80G-TA3-T MOSFET specs

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