All MOSFET. 8N80G-TF1-T Datasheet

 

8N80G-TF1-T Datasheet and Replacement


   Type Designator: 8N80G-TF1-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 59 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
   Package: TO220F
 

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8N80G-TF1-T Datasheet (PDF)

 ..1. Size:253K  utc
 8n80l-ta3-t 8n80g-ta3-t 8n80l-tf3-t 8n80g-tf3-t 8n80l-tf1-t 8n80g-tf1-t 8n80l-tf2-t 8n80g-tf2-t.pdf pdf_icon

8N80G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTCs advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche a

Datasheet: 8N65KG-TMS-T , 8N65KL-TN3-R , 8N65KG-TN3-R , 8N80L-TA3-T , 8N80G-TA3-T , 8N80L-TF3-T , 8N80G-TF3-T , 8N80L-TF1-T , 60N06 , 8N80L-TF2-T , 8N80G-TF2-T , 9N90L-TC3-T , 9N90G-TC3-T , 9N90L-TF1-T , 9N90G-TF1-T , 9N90L-TF2-T , 9N90G-TF2-T .

History: CEB6086 | AP60WN2K3H | CSD25302Q2

Keywords - 8N80G-TF1-T MOSFET datasheet

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