8N80G-TF1-T MOSFET. Datasheet pdf. Equivalent
Type Designator: 8N80G-TF1-T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 59 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 35 nC
trⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 135 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
Package: TO220F
8N80G-TF1-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
8N80G-TF1-T Datasheet (PDF)
8n80l-ta3-t 8n80g-ta3-t 8n80l-tf3-t 8n80g-tf3-t 8n80l-tf1-t 8n80g-tf1-t 8n80l-tf2-t 8n80g-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTCs advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche a
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