9N90G-TF1-T Specs and Replacement

Type Designator: 9N90G-TF1-T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220F

9N90G-TF1-T substitution

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9N90G-TF1-T datasheet

 ..1. Size:296K  utc
 9n90l-tc3-t 9n90g-tc3-t 9n90l-tf1-t 9n90g-tf1-t 9n90l-tf2-t 9n90g-tf2-t 9n90l-t3p-t 9n90g-t3p-t 9n90l-t3n-t 9n90g-t3n-t 9n90l-t47-t 9n90g-t47-t.pdf pdf_icon

9N90G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 9N90 Power MOSFET 9A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N90 uses UTC s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ... See More ⇒

 9.1. Size:628K  silicon standard
 ssm09n90gw.pdf pdf_icon

9N90G-TF1-T

SSM09N90GW N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM09N90GW acheives fast switching performance BVDSS 900V with low gate charge without a complex drive circuit. It is RDS(ON) 1.2 suitable for high voltage applications such as AC/DC converters and offline power supplies. I 8.6A D The SSM09N90GW is in a TO-247 (TO-3P) package, Pb-free; RoHS-compli... See More ⇒

Detailed specifications: 8N80G-TF3-T, 8N80L-TF1-T, 8N80G-TF1-T, 8N80L-TF2-T, 8N80G-TF2-T, 9N90L-TC3-T, 9N90G-TC3-T, 9N90L-TF1-T, RU7088R, 9N90L-TF2-T, 9N90G-TF2-T, 9N90L-T3P-T, 9N90G-T3P-T, 9N90L-T3N-T, 9N90G-T3N-T, 9N90L-T47-T, 9N90G-T47-T

Keywords - 9N90G-TF1-T MOSFET specs

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