UF840KG-TF1-T Specs and Replacement

Type Designator: UF840KG-TF1-T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.6 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.87 Ohm

Package: TO220F

UF840KG-TF1-T substitution

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UF840KG-TF1-T datasheet

 ..1. Size:376K  utc
 uf840kl-ta3-r uf840kg-ta3-r uf840kl-tf3-r uf840kg-tf3-r uf840kl-tf1-t uf840kg-tf1-t uf840kl-tn3-r uf840kg-tn3-r uf840kl-tq2-t uf840kg-tq2-t uf840kl-tq2-r uf840kg-tq2-r.pdf pdf_icon

UF840KG-TF1-T

UNISONIC TECHNOLOGIES CO., LTD UF840K-MTQ Power MOSFET 8A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * Low RDS(ON)... See More ⇒

 9.1. Size:426K  utc
 uf840.pdf pdf_icon

UF840KG-TF1-T

UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85 , N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. FEATURES * Low RDS(ON)=0.85 * Single Pulse Ava... See More ⇒

Detailed specifications: UF830G-TQ2-R, UF830L-TQ2-T, UF830G-TQ2-T, UF840KL-TA3-R, UF840KG-TA3-R, UF840KL-TF3-R, UF840KG-TF3-R, UF840KL-TF1-T, AO4407A, UF840KL-TN3-R, UF840KG-TN3-R, UF840KL-TQ2-T, UF840KG-TQ2-T, UF840KL-TQ2-R, UF840KG-TQ2-R, UK3018G-AE2-R, UK3018G-AL3-R

Keywords - UF840KG-TF1-T MOSFET specs

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