All MOSFET. UP9971G-S08-R Datasheet

 

UP9971G-S08-R MOSFET. Datasheet pdf. Equivalent


   Type Designator: UP9971G-S08-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 32.5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 156 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOP8

 UP9971G-S08-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UP9971G-S08-R Datasheet (PDF)

 ..1. Size:239K  utc
 up9971l-d08-t up9971g-d08-t up9971g-s08-r.pdf

UP9971G-S08-R UP9971G-S08-R

UNISONIC TECHNOLOGIES CO., LTD UP9971 Power MOSFET 5A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UP9971 uses UTCs advanced technology toDIP-8provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for being used as a load switch or in PWM applications. FEATURES * RDS(ON)

 8.1. Size:198K  utc
 up9971.pdf

UP9971G-S08-R UP9971G-S08-R

UNISONIC TECHNOLOGIES CO., LTD UP9971 Power MOSFET 5A, 60V N-CHANNEL POWER MOSFET DESCRIPTION DIP-8The UTC UP9971 uses UTCs advanced technology toprovide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for being used as a load switch or in PWM applications. FEATURES * RDS(ON)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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