All MOSFET. UT2302G-AE3-R Datasheet

 

UT2302G-AE3-R Datasheet and Replacement


   Type Designator: UT2302G-AE3-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT23
 

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UT2302G-AE3-R Datasheet (PDF)

 ..1. Size:288K  utc
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UT2302G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance,and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applicationsand suited for low voltage applications such a

 3.1. Size:1511K  cn vbsemi
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UT2302G-AE3-R

UT2302G-AE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

 8.1. Size:269K  utc
ut2302.pdf pdf_icon

UT2302G-AE3-R

UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance,and excellent thermal and electrical capabilities. Used in commercial and industrial surface mount applications andsuited for low voltage applications such as

 8.2. Size:911K  cn vbsemi
ut2302l-ae3.pdf pdf_icon

UT2302G-AE3-R

UT2302L-AE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

Datasheet: UT100N03L-TQ2-R , UT100N03G-TQ2-R , UT100N03G-K08-5060-R , UT20N03L-TN3-R , UT20N03G-TN3-R , UT20N03G-K08-5060-R , UT2301G-AE2-R , UT2302G-AE2-R , 2N7000 , UT2305G-AE2-R , UT2305G-AE3-R , UT2305G-AG3-R , UT2305L-AE2-R , UT2305L-AE3-R , UT2305L-AL3-R , UT2316G-AE2-R , UT2316G-AE3-R .

History: CS18N50W | AOSP36326C | APM9935K | STW43NM60ND | SI3430DV | SI4286DY | MDU1512RH

Keywords - UT2302G-AE3-R MOSFET datasheet

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