UT3N10L-AG6-R MOSFET Datasheet: N-Ch, 100V, 3A. Full specification with pinout and replacement list

UT3N10L-AG6-R Specs and Replacement

   Type Designator: UT3N10L-AG6-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: SOT26

UT3N10L-AG6-R substitution

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UT3N10L-AG6-R datasheet

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UNISONIC TECHNOLOGIES CO., LTD UT3N10 Power MOSFET N-CHANNEL ENHANCEMENT 3 MODE POWER MOSFET 2 1 1 SOT-23 TO-252 (EIAJ SC-59) DESCRIPTION The UTC UT3N10 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. 1 1 SOT-89 SOT-223 FE... See More ⇒

5.1. Size:385K utc
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