UT3N10L-TN3-R Specs and Replacement
Type Designator: UT3N10L-TN3-R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
Package: TO252
UT3N10L-TN3-R substitution
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UT3N10L-TN3-R datasheet
ut3n10l-ag6-r ut3n10g-ag6-r ut3n10l-tn3-r ut3n10g-tn3-r ut3n10l-k08-3030-r ut3n10g-k08-3030-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3N10 Power MOSFET N-CHANNEL ENHANCEMENT 3 MODE POWER MOSFET 2 1 1 SOT-23 TO-252 (EIAJ SC-59) DESCRIPTION The UTC UT3N10 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. 1 1 SOT-89 SOT-223 FE... See More ⇒
ut3n10l-aa3-r ut3n10g-aa3-r ut3n10l-ab3-r ut3n10g-ab3-r ut3n10l-ae3-r ut3n10g-ae3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT3N10 Power MOSFET N-CHANNEL ENHANCEMENT 3 MODE POWER MOSFET 2 1 1 SOT-23 TO-252 (EIAJ SC-59) DESCRIPTION The UTC UT3N10 is an N-channel power MOSFET providing very low on-resistance. It has high efficiency and perfect cost-effectiveness. It can be generally applied in the commercial and industrial fields. 1 1 SOT-89 SOT-223 FE... See More ⇒
Detailed specifications: UT3N10L-AA3-R, UT3N10G-AA3-R, UT3N10L-AB3-R, UT3N10G-AB3-R, UT3N10L-AE3-R, UT3N10G-AE3-R, UT3N10L-AG6-R, UT3N10G-AG6-R, 5N60, UT3N10G-TN3-R, UT3N10L-K08-3030-R, UT3N10G-K08-3030-R, UT4404G-S08-R, UT4421G-S08-R, UT60N03L-TA3-T, UT60N03G-TA3-T, UT60N03L-TM3-T
Keywords - UT3N10L-TN3-R MOSFET specs
UT3N10L-TN3-R cross reference
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UT3N10L-TN3-R substitution
UT3N10L-TN3-R replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
