UT8205AL-AL6-R MOSFET. Datasheet pdf. Equivalent
Type Designator: UT8205AL-AL6-R
Marking Code: 8205L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.4 nC
trⓘ - Rise Time: 2.7 nS
Cossⓘ - Output Capacitance: 78 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOT26
UT8205AL-AL6-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UT8205AL-AL6-R Datasheet (PDF)
ut8205al-al6-r ut8205ag-ag6-r ut8205al-s08-r ut8205ag-s08-r ut8205al-p08-r ut8205ag-p08-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @ VGS=4.5V, ID=6.0A * Fast switching capability * Avalanch
ut8205a.pdf
UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @VGS = 4.5 V * Ultra low gate charge ( typical 23 nC ) * Low re
ut8205ag-ag6.pdf
UT8205AG-AG6www.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 G2
ut8205ag-ag6.pdf
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