UTM2054G-AB3-R MOSFET. Datasheet pdf. Equivalent
Type Designator: UTM2054G-AB3-R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11.5 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOT89
UTM2054G-AB3-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UTM2054G-AB3-R Datasheet (PDF)
utm2054l-ab3-r utm2054g-ab3-r utm2054l-ae3-r utm2054g-ae3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UTM2054 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 35m @VGS=10V * RDS(ON)= 45m @VGS=4.5V * RDS(ON)= 11
utm2054.pdf
UNISONIC TECHNOLOGIES CO., LTD UTM2054 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 35m @VGS=10V * RDS(ON)= 45m @VGS=4.5V * RDS(ON)= 11
utm2054.pdf
SMD Type MOSFETN-Channel MOSFETUTM2054 (KTM2054)1.70 0.1 Features VDS (V) = 20V ID = 5 A (VGS = 10V) RDS(ON) 40m (VGS = 10V)0.42 0.10.46 0.1 RDS(ON) 54m (VGS = 4.5V) RDS(ON) 130m (VGS = 2.5V)1.Gate Fast switching capability2.Drain3.SourceDrainGateSource Absolute Maximum Ratings Ta = 25Parameter Symbol Rat
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
