All MOSFET. UTM6016G-TA3-T Datasheet

 

UTM6016G-TA3-T Datasheet and Replacement


   Type Designator: UTM6016G-TA3-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 106 nS
   Cossⓘ - Output Capacitance: 208 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220
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UTM6016G-TA3-T Datasheet (PDF)

 ..1. Size:261K  utc
 utm6016l-ta3-t utm6016g-ta3-t utm6016l-tn3-r utm6016g-tn3-r utm6016g-s08-r utm6016g-k08-5060-r.pdf pdf_icon

UTM6016G-TA3-T

UNISONIC TECHNOLOGIES CO., LTD UTM6016 Power MOSFET 8.0A, 60V N-CHANNEL FAST SWITCHING MOSFET 11TO-220 DESCRIPTION TO-252The UTC UTM6016 is an N-Channel MOSFET, it uses UTCs advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC UTM6016 is suitable for application in networking 1DC-DC power s

 6.1. Size:858K  cn vbsemi
 utm6016g.pdf pdf_icon

UTM6016G-TA3-T

UTM6016Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.012 at VGS = 10 V 12.660 10.5 nC Optimized for Low Side Synchronous0.015 at VGS = 4.5 V 11.6Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CC

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History: WMM11N80M3 | RFP2N10L | IRFI7536G | AM2314NE | FDMS9620S

Keywords - UTM6016G-TA3-T MOSFET datasheet

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