UTM6016G-TN3-R Specs and Replacement

Type Designator: UTM6016G-TN3-R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 106 nS

Cossⓘ - Output Capacitance: 208 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO252

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UTM6016G-TN3-R datasheet

 ..1. Size:261K  utc
 utm6016l-ta3-t utm6016g-ta3-t utm6016l-tn3-r utm6016g-tn3-r utm6016g-s08-r utm6016g-k08-5060-r.pdf pdf_icon

UTM6016G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD UTM6016 Power MOSFET 8.0A, 60V N-CHANNEL FAST SWITCHING MOSFET 1 1 TO-220 DESCRIPTION TO-252 The UTC UTM6016 is an N-Channel MOSFET, it uses UTC s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC UTM6016 is suitable for application in networking 1 DC-DC power s... See More ⇒

 6.1. Size:858K  cn vbsemi
 utm6016g.pdf pdf_icon

UTM6016G-TN3-R

UTM6016G www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.012 at VGS = 10 V 12.6 60 10.5 nC Optimized for Low Side Synchronous 0.015 at VGS = 4.5 V 11.6 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CC... See More ⇒

Detailed specifications: UTM4052G-TN4-R, UTM4052L-TN4-T, UTM4052G-TN4-T, UTM4953L-S08-R, UTM4953G-S08-R, UTM6016L-TA3-T, UTM6016G-TA3-T, UTM6016L-TN3-R, IRLZ44N, UTM6016G-S08-R, UTM6016G-K08-5060-R, UTT18P10L-TN3-R, UTT18P10G-TN3-R, UTT18P10L-TA3-T, UTT18P10G-TA3-T, UTT24N06L-TM3-T, UTT24N06G-TM3-T

Keywords - UTM6016G-TN3-R MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.