UTM6016G-S08-R MOSFET. Datasheet pdf. Equivalent
Type Designator: UTM6016G-S08-R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 160 nC
trⓘ - Rise Time: 106 nS
Cossⓘ - Output Capacitance: 208 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOP8
UTM6016G-S08-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
UTM6016G-S08-R Datasheet (PDF)
utm6016l-ta3-t utm6016g-ta3-t utm6016l-tn3-r utm6016g-tn3-r utm6016g-s08-r utm6016g-k08-5060-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UTM6016 Power MOSFET 8.0A, 60V N-CHANNEL FAST SWITCHING MOSFET 11TO-220 DESCRIPTION TO-252The UTC UTM6016 is an N-Channel MOSFET, it uses UTCs advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC UTM6016 is suitable for application in networking 1DC-DC power s
utm6016g.pdf
UTM6016Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.012 at VGS = 10 V 12.660 10.5 nC Optimized for Low Side Synchronous0.015 at VGS = 4.5 V 11.6Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CC
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