All MOSFET. UTT24N06G-TM3-T Datasheet

 

UTT24N06G-TM3-T Datasheet and Replacement


   Type Designator: UTT24N06G-TM3-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO251
 

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UTT24N06G-TM3-T Datasheet (PDF)

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UTT24N06G-TM3-T

UNISONIC TECHNOLOGIES CO., LTD UTT24N06 Power MOSFET 24A, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC UTT24N06 is an N-Channel enhancement mode MOSFET, it uses UTCs advanced technology to provide the customers with a minimum on state resistance and low gate charge, etc. The UTC UTT24N06 is suitable for switching application in Industry and converter ap

Datasheet: UTM6016G-TN3-R , UTM6016G-S08-R , UTM6016G-K08-5060-R , UTT18P10L-TN3-R , UTT18P10G-TN3-R , UTT18P10L-TA3-T , UTT18P10G-TA3-T , UTT24N06L-TM3-T , AON6414A , UTT24N06L-TN3-R , UTT24N06G-TN3-R , UTT25P10L-TA3-T , UTT25P10G-TA3-T , UTT25P10L-TF3-T , UTT25P10G-TF3-T , UTT25P10L-TN3-R , UTT25P10G-TN3-R .

History: FDD26AN06A0 | IRHM9260 | IRHMB57Z60 | CEH2288 | FDD2512 | SQJ431EP | APT10M19SVFR

Keywords - UTT24N06G-TM3-T MOSFET datasheet

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