All MOSFET. UTT24N06G-TM3-T Datasheet

 

UTT24N06G-TM3-T MOSFET. Datasheet pdf. Equivalent


   Type Designator: UTT24N06G-TM3-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 115 nC
   trⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO251

 UTT24N06G-TM3-T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UTT24N06G-TM3-T Datasheet (PDF)

 0.1. Size:204K  utc
 utt24n06l-tm3-t utt24n06g-tm3-t utt24n06l-tn3-r utt24n06g-tn3-r.pdf

UTT24N06G-TM3-T UTT24N06G-TM3-T

UNISONIC TECHNOLOGIES CO., LTD UTT24N06 Power MOSFET 24A, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC UTT24N06 is an N-Channel enhancement mode MOSFET, it uses UTCs advanced technology to provide the customers with a minimum on state resistance and low gate charge, etc. The UTC UTT24N06 is suitable for switching application in Industry and converter ap

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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