UTT24N06G-TM3-T Specs and Replacement

Type Designator: UTT24N06G-TM3-T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO251

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UTT24N06G-TM3-T datasheet

 0.1. Size:204K  utc
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UTT24N06G-TM3-T

UNISONIC TECHNOLOGIES CO., LTD UTT24N06 Power MOSFET 24A, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC UTT24N06 is an N-Channel enhancement mode MOSFET, it uses UTC s advanced technology to provide the customers with a minimum on state resistance and low gate charge, etc. The UTC UTT24N06 is suitable for switching application in Industry and converter ap... See More ⇒

Detailed specifications: UTM6016G-TN3-R, UTM6016G-S08-R, UTM6016G-K08-5060-R, UTT18P10L-TN3-R, UTT18P10G-TN3-R, UTT18P10L-TA3-T, UTT18P10G-TA3-T, UTT24N06L-TM3-T, AON6414A, UTT24N06L-TN3-R, UTT24N06G-TN3-R, UTT25P10L-TA3-T, UTT25P10G-TA3-T, UTT25P10L-TF3-T, UTT25P10G-TF3-T, UTT25P10L-TN3-R, UTT25P10G-TN3-R

Keywords - UTT24N06G-TM3-T MOSFET specs

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