2P308G9 Specs and Replacement

Type Designator: 2P308G9

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.08 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.02 A

Tj ⓘ - Maximum Junction Temperature: 100 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 250 Ohm

Package: SOT-23

2P308G9 substitution

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2P308G9 datasheet

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2P308G9

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2P308G9

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Detailed specifications: UTT4850G-S08-R, UTT6NP10L-TN4-R, UTT6NP10G-TN4-R, UTT6NP10L-S08-R, UTT6NP10G-S08-R, 2P302A, 2P308A9, 2P308B9, STP80NF70, 2P308D9, 2P601A9, 2P7154AC, 2P7154BC, 2P7154VC, 2P802A, 2P819A, 2P821A

Keywords - 2P308G9 MOSFET specs

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