2P601A9 Specs and Replacement
Type Designator: 2P601A9
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 0.01 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 20 Ohm
Package: SOT-89
2P601A9 substitution
- MOSFET ⓘ Cross-Reference Search
2P601A9 datasheet
Detailed specifications: UTT6NP10G-TN4-R, UTT6NP10L-S08-R, UTT6NP10G-S08-R, 2P302A, 2P308A9, 2P308B9, 2P308G9, 2P308D9, TK10A60D, 2P7154AC, 2P7154BC, 2P7154VC, 2P802A, 2P819A, 2P821A, 2P821B, 2P826AC
Keywords - 2P601A9 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: ME2325S-G | STP57N65M5
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