2P829A9 Specs and Replacement

Type Designator: 2P829A9

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: КТ-106-1

2P829A9 substitution

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2P829A9 datasheet

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2P829A9

U = 1200 28299 Ic = 10 R = 0,9 -106-1 ... See More ⇒

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2P829A9

U = 1200 2829 Ic = 10 R = 0,9 . - 2 -105-... See More ⇒

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2P829A9

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2P829A9

U = 30 2829 Ic = 80 R = 0,03 . - 2 -43-1.... See More ⇒

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Detailed specifications: 2P7154BC, 2P7154VC, 2P802A, 2P819A, 2P821A, 2P821B, 2P826AC, 2P829A, SI2302, 2P829B, 2P829B9, 2P829V, 2P829V9, 2P829G, 2P829G9, 2P829D, 2P829D9

Keywords - 2P829A9 MOSFET specs

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