2P829B9 Datasheet and Replacement
Type Designator: 2P829B9
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 630 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: КТ-106-1
2P829B9 substitution
2P829B9 Datasheet (PDF)
Datasheet: 2P802A , 2P819A , 2P821A , 2P821B , 2P826AC , 2P829A , 2P829A9 , 2P829B , 75N75 , 2P829V , 2P829V9 , 2P829G , 2P829G9 , 2P829D , 2P829D9 , 2P829E , 2P829E9 .
History: FQPF17N40 | FDBL9406L-F085 | 80N08
Keywords - 2P829B9 MOSFET datasheet
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History: FQPF17N40 | FDBL9406L-F085 | 80N08



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