2P829G
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2P829G
Marking Code: 2П829Г
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 125
°C
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 1200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05
Ohm
Package: КТ-43А
2P829G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2P829G
Datasheet (PDF)
..1. Size:174K russia
2p829g.pdf 
U = 200 2829Ic = 40 R = 0,05 . - 2 -43-1.
0.1. Size:160K russia
2p829g9.pdf
U = 200 28299Ic = 40 R = 0,05 -95-1
9.1. Size:154K russia
2p829i9.pdf
U = 200 28299Ic = 40 R = 0,05 -95-1
9.2. Size:162K russia
2p829j.pdf
U = 30 2829Ic = 80 R = 0,03 . - 2 -43-1.
9.3. Size:170K russia
2p829e9.pdf
U = 60 28299Ic = 60 R = 0,005 -95-1
9.4. Size:153K russia
2p829v9.pdf
U = 600 28299Ic = 20 R = 0,15 -106-1
9.5. Size:187K russia
2p829v.pdf
U = 600 2829Ic = 20 R = 0,15 . - 2 -105-1
9.6. Size:180K russia
2p829e.pdf
U = 60 2829Ic = 60 R = 0,005 . - 2 -43-
9.7. Size:157K russia
2p829j9.pdf
U = 30 28299Ic = 80 R = 0,03
9.8. Size:161K russia
2p829b9.pdf
U = 800 28299Ic = 15 R = 0,5 -106-1
9.9. Size:171K russia
2p829d.pdf
U = 100 2829Ic = 50 R = 0,01 . - 2 -43
9.10. Size:172K russia
2p829a9.pdf
U = 1200 28299Ic = 10 R = 0,9 -106-1
9.11. Size:207K russia
2p829a.pdf
U = 1200 2829Ic = 10 R = 0,9 . - 2 -105-
9.12. Size:167K russia
2p829d9.pdf
U = 100 28299Ic = 50 R = 0,01 -95-1
9.13. Size:195K russia
2p829b.pdf
U = 800 2829Ic = 15 R = 0,5 . - 2 -105-1
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