All MOSFET. 2P829G Datasheet

 

2P829G Datasheet and Replacement


   Type Designator: 2P829G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: КТ-43А
 

 2P829G substitution

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2P829G Datasheet (PDF)

 ..1. Size:174K  russia
 2p829g.pdf pdf_icon

2P829G

U = 200 2829Ic = 40 R = 0,05 . - 2 -43-1.

 0.1. Size:160K  russia
 2p829g9.pdf pdf_icon

2P829G

U = 200 28299Ic = 40 R = 0,05 -95-1

 9.1. Size:154K  russia
 2p829i9.pdf pdf_icon

2P829G

U = 200 28299Ic = 40 R = 0,05 -95-1

 9.2. Size:162K  russia
 2p829j.pdf pdf_icon

2P829G

U = 30 2829Ic = 80 R = 0,03 . - 2 -43-1.

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Datasheet: 2P821B , 2P826AC , 2P829A , 2P829A9 , 2P829B , 2P829B9 , 2P829V , 2P829V9 , IRFB31N20D , 2P829G9 , 2P829D , 2P829D9 , 2P829E , 2P829E9 , 2P829J , 2P829J9 , 2P829I9 .

History: IRFZ48PBF | 2SK3298 | F20S60C3

Keywords - 2P829G MOSFET datasheet

 2P829G cross reference
 2P829G equivalent finder
 2P829G lookup
 2P829G substitution
 2P829G replacement

 

 
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