All MOSFET. 2P829D9 Datasheet

 

2P829D9 Datasheet and Replacement


   Type Designator: 2P829D9
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   trⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 2600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: КТ-95-1
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2P829D9 Datasheet (PDF)

 ..1. Size:167K  russia
 2p829d9.pdf pdf_icon

2P829D9

U = 100 28299Ic = 50 R = 0,01 -95-1

 8.1. Size:171K  russia
 2p829d.pdf pdf_icon

2P829D9

U = 100 2829Ic = 50 R = 0,01 . - 2 -43

 9.1. Size:154K  russia
 2p829i9.pdf pdf_icon

2P829D9

U = 200 28299Ic = 40 R = 0,05 -95-1

 9.2. Size:162K  russia
 2p829j.pdf pdf_icon

2P829D9

U = 30 2829Ic = 80 R = 0,03 . - 2 -43-1.

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History: LSF65R570GT | CSD16342Q5A

Keywords - 2P829D9 MOSFET datasheet

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