All MOSFET. 2P829E9 Datasheet

 

2P829E9 Datasheet and Replacement


   Type Designator: 2P829E9
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   trⓘ - Rise Time: 540 nS
   Cossⓘ - Output Capacitance: 3200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: КТ-95-1
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2P829E9 Datasheet (PDF)

 ..1. Size:170K  russia
 2p829e9.pdf pdf_icon

2P829E9

U = 60 28299Ic = 60 R = 0,005 -95-1

 8.1. Size:180K  russia
 2p829e.pdf pdf_icon

2P829E9

U = 60 2829Ic = 60 R = 0,005 . - 2 -43-

 9.1. Size:154K  russia
 2p829i9.pdf pdf_icon

2P829E9

U = 200 28299Ic = 40 R = 0,05 -95-1

 9.2. Size:162K  russia
 2p829j.pdf pdf_icon

2P829E9

U = 30 2829Ic = 80 R = 0,03 . - 2 -43-1.

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Keywords - 2P829E9 MOSFET datasheet

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