2P829I9 Specs and Replacement

Type Designator: 2P829I9

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: КТ-94-2

2P829I9 substitution

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2P829I9 datasheet

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2P829I9

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2P829I9

U = 30 2829 Ic = 80 R = 0,03 . - 2 -43-1.... See More ⇒

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2P829I9

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2P829I9

U = 600 28299 Ic = 20 R = 0,15 -106-1 ... See More ⇒

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Detailed specifications: 2P829G, 2P829G9, 2P829D, 2P829D9, 2P829E, 2P829E9, 2P829J, 2P829J9, IRFB31N20D, 2P903A, 2P903B, 2P903V, 2P922A, 2P977A, 2P978A, 2P978B, 2P978V

Keywords - 2P829I9 MOSFET specs

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 2P829I9 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.