2P829I9 Datasheet and Replacement
Type Designator: 2P829I9
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 1200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: КТ-94-2
2P829I9 substitution
2P829I9 Datasheet (PDF)
Datasheet: 2P829G , 2P829G9 , 2P829D , 2P829D9 , 2P829E , 2P829E9 , 2P829J , 2P829J9 , IRFB31N20D , 2P903A , 2P903B , 2P903V , 2P922A , 2P977A , 2P978A , 2P978B , 2P978V .
History: IPS65R950C6
Keywords - 2P829I9 MOSFET datasheet
2P829I9 cross reference
2P829I9 equivalent finder
2P829I9 lookup
2P829I9 substitution
2P829I9 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IPS65R950C6
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