All MOSFET. 2P829I9 Datasheet

 

2P829I9 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2P829I9
   Marking Code: 2П829И9
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: КТ-94-2

 2P829I9 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2P829I9 Datasheet (PDF)

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