2P979V Specs and Replacement

Type Designator: 2P979V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 420 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 125 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: SOT-262

2P979V substitution

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2P979V datasheet

 ..1. Size:109K  russia
 2p979v.pdf pdf_icon

2P979V

2979 n- , DMOS ... See More ⇒

 9.1. Size:100K  russia
 2p979b.pdf pdf_icon

2P979V

2979 n- , DMOS ... See More ⇒

 9.2. Size:100K  russia
 2p979a.pdf pdf_icon

2P979V

2979 n- , DMOS ... See More ⇒

Detailed specifications: 2P977A, 2P978A, 2P978B, 2P978V, 2P978G, 2P978D, 2P979A, 2P979B, RU7088R, 2P980A, 2P980BC, 2P981A, 2P981BC, 2P981VC, 2P985A-2, 2P985B-2, 2P985V-2

Keywords - 2P979V MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.