All MOSFET. J112RLRAG Datasheet

 

J112RLRAG Datasheet and Replacement


   Type Designator: J112RLRAG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
   |Id| ⓘ - Maximum Drain Current: 0.05 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
   Package: TO-92
 

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J112RLRAG Datasheet (PDF)

 ..1. Size:85K  1
 j112g j112rlrag.pdf pdf_icon

J112RLRAG

J111, J112JFET Chopper TransistorsN-Channel DepletionFeatureshttp://onsemi.com Pb-Free Packages are Available*1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Gate Voltage VDG -35 VdcGATEGate -Source Voltage VGS -35 VdcGate Current IG 50 mAdc2 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above = 25C 2.8 mW/CLead Temperature TL 300

 9.1. Size:110K  motorola
 j112 j112rev0.pdf pdf_icon

J112RLRAG

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby J112/DJFET Chopper TransistorNChannel Depletion1 DRAINJ1123GATE2 SOURCEMAXIMUM RATINGSRating Symbol Value Unit1DrainGate Voltage VDG 35 Vdc23GateSource Voltage VGS 35 VdcCASE 2904, STYLE 5Gate Current IG 50 mAdcTO92 (TO226AA)Total Device Dissipation @ TA = 25C PD 350

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