J112RLRAG
MOSFET. Datasheet pdf. Equivalent
Type Designator: J112RLRAG
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 35
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 35
V
|Id|ⓘ - Maximum Drain Current: 0.05
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 50
Ohm
Package:
TO-92
J112RLRAG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
J112RLRAG
Datasheet (PDF)
..1. Size:85K 1
j112g j112rlrag.pdf
J111, J112JFET Chopper TransistorsN-Channel DepletionFeatureshttp://onsemi.com Pb-Free Packages are Available*1 DRAINMAXIMUM RATINGSRating Symbol Value Unit3Drain-Gate Voltage VDG -35 VdcGATEGate -Source Voltage VGS -35 VdcGate Current IG 50 mAdc2 SOURCETotal Device Dissipation @ TA = 25C PD 350 mWDerate above = 25C 2.8 mW/CLead Temperature TL 300
9.1. Size:110K motorola
j112 j112rev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby J112/DJFET Chopper TransistorNChannel Depletion1 DRAINJ1123GATE2 SOURCEMAXIMUM RATINGSRating Symbol Value Unit1DrainGate Voltage VDG 35 Vdc23GateSource Voltage VGS 35 VdcCASE 2904, STYLE 5Gate Current IG 50 mAdcTO92 (TO226AA)Total Device Dissipation @ TA = 25C PD 350
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