KP809B1 Specs and Replacement
Type Designator: KP809B1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 100 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 405 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-218
KP809B1 substitution
- MOSFET ⓘ Cross-Reference Search
KP809B1 datasheet
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Detailed specifications: KP767V, KP777B, KP778B, KP778V, KP801B, KP809A, KP809A1, KP809B, 8205A, KP809V, KP809V1, KP809G, KP809G1, KP809D, KP809D1, KP809E, KP809E1
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
