KP809V1 PDF and Equivalents Search

 

KP809V1 PDF Specs and Replacement


   Type Designator: KP809V1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 100 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 405 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-218
 

 KP809V1 substitution

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KP809V1 PDF Specs

 ..1. Size:330K  russia
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KP809V1

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Detailed specifications: KP778B , KP778V , KP801B , KP809A , KP809A1 , KP809B , KP809B1 , KP809V , IRFP250N , KP809G , KP809G1 , KP809D , KP809D1 , KP809E , KP809E1 , KP813A , KP813B .

History: KP809G

Keywords - KP809V1 MOSFET specs

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 
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