KP809D1 Specs and Replacement
Type Designator: KP809D1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 100 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 405 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO-218
KP809D1 substitution
KP809D1 Specs
..1. Size:330K russia
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kp809a kp809b kp809v kp809g kp809d kp809e kp809a1 kp809b1 kp809v1 kp809g1 kp809d1 kp809e1 kp809b1-5 kp809b2-5.pdf
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Detailed specifications: KP809A1 , KP809B , KP809B1 , KP809V , KP809V1 , KP809G , KP809G1 , KP809D , 2SK3878 , KP809E , KP809E1 , KP813A , KP813B , KP901A , KP901B , KP902A , KP903A .
History: ME7170-G
Keywords - KP809D1 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
