KP809D1 PDF and Equivalents Search

 

KP809D1 Specs and Replacement

Type Designator: KP809D1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 100 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 405 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO-218

KP809D1 substitution

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KP809D1 datasheet

 ..1. Size:330K  russia
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KP809D1

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Detailed specifications: KP809A1 , KP809B , KP809B1 , KP809V , KP809V1 , KP809G , KP809G1 , KP809D , 2SK3878 , KP809E , KP809E1 , KP813A , KP813B , KP901A , KP901B , KP902A , KP903A .

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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 


 
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