KP809D1 MOSFET. Datasheet pdf. Equivalent

Type Designator: KP809D1

Marking Code: КП809Д1

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 100 °C

Rise Time (tr): 50 nS

Drain-Source Capacitance (Cd): 405 pF

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: TO-218

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KP809D1 Datasheet (PDF)

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