All MOSFET. SPP100N08S2L-07 Datasheet

 

SPP100N08S2L-07 Datasheet and Replacement


   Type Designator: SPP100N08S2L-07
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 1080 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: TO220
 

 SPP100N08S2L-07 substitution

   - MOSFET ⓘ Cross-Reference Search

 

SPP100N08S2L-07 Datasheet (PDF)

 0.1. Size:200K  1
spp100n08s2l-07 spb100n08s2l-07.pdf pdf_icon

SPP100N08S2L-07

SPP100N08S2L-07SPB100N08S2L-07OptiMOS Power-TransistorProduct SummaryFeatureVDS75 V N-ChannelRDS(on) max. SMD version 6.5 m Enhancement modeID 100 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N08S2L-07 P- TO220 -3-1 Q67060-S6045PN08L07SPB100N0

 3.1. Size:309K  infineon
spp100n08s2-07 spb100n08s2-07.pdf pdf_icon

SPP100N08S2L-07

SPP100N08S2-07SPB100N08S2-07OptiMOS Power-TransistorProduct SummaryFeatureVDS75 V N-ChannelRDS(on) max. SMD version 6.8 m Enhancement modeID 100 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N08S2-07 P- TO220 -3-1 Q67060-S6044PN0807SPB100N08S2-07 P- TO263 -3-2

 6.1. Size:312K  1
spp100n06s2-05 spb100n06s2-05.pdf pdf_icon

SPP100N08S2L-07

SPP100N06S2-05SPB100N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) max. SMD version 4.7 m Enhancement modeID 100 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N06S2-05 P- TO220 -3-1 Q67060-S6048PN0605SPB100N06S2-05 P- TO263 -3-2

 6.2. Size:310K  infineon
spp100n06s2l-05 spb100n06s2l-05.pdf pdf_icon

SPP100N08S2L-07

SPP100N06S2L-05SPB100N06S2L-05OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) max. SMD version 4.4 m Enhancement modeID 100 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP100N06S2L-05 P- TO220 -3-1 Q67060-S6043PN06L05SPB100N0

Datasheet: KP901B , KP902A , KP903A , KP903B , KP903V , DN3134KW , QM3058M6 , QM3056M6 , RFP50N06 , SPB100N08S2L-07 , CEF02N65D , CEP02N65D , CEB02N65D , HYG055N08NS1P , HYG055N08NS1B , HY1808AP , HY1808AM .

History: FDB86366-F085

Keywords - SPP100N08S2L-07 MOSFET datasheet

 SPP100N08S2L-07 cross reference
 SPP100N08S2L-07 equivalent finder
 SPP100N08S2L-07 lookup
 SPP100N08S2L-07 substitution
 SPP100N08S2L-07 replacement

 

 
Back to Top

 


 
.