SPB100N08S2L-07 PDF and Equivalents Search

 

SPB100N08S2L-07 Specs and Replacement

Type Designator: SPB100N08S2L-07

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 1080 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO263

SPB100N08S2L-07 substitution

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SPB100N08S2L-07 datasheet

 0.1. Size:200K  1
spp100n08s2l-07 spb100n08s2l-07.pdf pdf_icon

SPB100N08S2L-07

SPP100N08S2L-07 SPB100N08S2L-07 OptiMOS Power-Transistor Product Summary Feature VDS 75 V N-Channel RDS(on) max. SMD version 6.5 m Enhancement mode ID 100 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP100N08S2L-07 P- TO220 -3-1 Q67060-S6045 PN08L07 SPB100N0... See More ⇒

 3.1. Size:309K  infineon
spp100n08s2-07 spb100n08s2-07.pdf pdf_icon

SPB100N08S2L-07

SPP100N08S2-07 SPB100N08S2-07 OptiMOS Power-Transistor Product Summary Feature VDS 75 V N-Channel RDS(on) max. SMD version 6.8 m Enhancement mode ID 100 A 175 C operating temperature P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP100N08S2-07 P- TO220 -3-1 Q67060-S6044 PN0807 SPB100N08S2-07 P- TO263 -3-2 ... See More ⇒

 6.1. Size:312K  1
spp100n06s2-05 spb100n06s2-05.pdf pdf_icon

SPB100N08S2L-07

SPP100N06S2-05 SPB100N06S2-05 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) max. SMD version 4.7 m Enhancement mode ID 100 A 175 C operating temperature P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP100N06S2-05 P- TO220 -3-1 Q67060-S6048 PN0605 SPB100N06S2-05 P- TO263 -3-2 ... See More ⇒

 6.2. Size:310K  infineon
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SPB100N08S2L-07

SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) max. SMD version 4.4 m Enhancement mode ID 100 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP100N06S2L-05 P- TO220 -3-1 Q67060-S6043 PN06L05 SPB100N0... See More ⇒

Detailed specifications: KP902A, KP903A, KP903B, KP903V, DN3134KW, QM3058M6, QM3056M6, SPP100N08S2L-07, 12N60, CEF02N65D, CEP02N65D, CEB02N65D, HYG055N08NS1P, HYG055N08NS1B, HY1808AP, HY1808AM, HY1808AB

Keywords - SPB100N08S2L-07 MOSFET specs

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