All MOSFET. AP3N9R5H Datasheet

 

AP3N9R5H Datasheet and Replacement


   Type Designator: AP3N9R5H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 22.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 37.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO252
 

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AP3N9R5H Datasheet (PDF)

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AP3N9R5H

AP3N9R5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 9.5m Fast Switching Characteristic ID 37.8AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N9R5 seriesare fromAdvanced Power innovated

Datasheet: HY1808AB , HY1808APS , HY1808APM , MDP1991 , NCE8580 , SRC60R090B , AONY36352 , HM25P06D , IRF1407 , EMB04N03H , HY3215W , KPS8N65F , QN3107M6N , S70N08R , S70N08S , S70N08RN , S70N08RP .

History: HY3215W

Keywords - AP3N9R5H MOSFET datasheet

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