AP3N9R5H PDF and Equivalents Search

 

AP3N9R5H Specs and Replacement

Type Designator: AP3N9R5H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 22.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 37.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: TO252

AP3N9R5H substitution

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AP3N9R5H datasheet

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 ap3n9r5h.pdf pdf_icon

AP3N9R5H

AP3N9R5H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 9.5m Fast Switching Characteristic ID 37.8A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP3N9R5 seriesare fromAdvanced Power innovated ... See More ⇒

Detailed specifications: HY1808AB, HY1808APS, HY1808APM, MDP1991, NCE8580, SRC60R090B, AONY36352, HM25P06D, IRF1407, EMB04N03H, HY3215W, KPS8N65F, QN3107M6N, S70N08R, S70N08S, S70N08RN, S70N08RP

Keywords - AP3N9R5H MOSFET specs

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