HM100N06F MOSFET Datasheet: N-Ch, 60V, 100A. Full specification with pinout and replacement list

HM100N06F Specs and Replacement

Type Designator: HM100N06F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.8 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-220F

HM100N06F substitution

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HM100N06F datasheet

..1. Size:426K cn hmsemi
hm100n06f.pdf pdf_icon

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON) ... See More ⇒

7.1. Size:704K cn hmsemi
hm100n03.pdf pdf_icon

HM100N03 N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON) ... See More ⇒

7.2. Size:759K cn hmsemi
hm100n03k.pdf pdf_icon

HM100N03K N-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON) ... See More ⇒

7.3. Size:428K cn hmsemi
hm100n03d.pdf pdf_icon

HM100N03D Description The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON) ... See More ⇒