All MOSFET. HM100N06F Datasheet

 

HM100N06F MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM100N06F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 10.8 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-220F

 HM100N06F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM100N06F Datasheet (PDF)

 ..1. Size:426K  cn hmsemi
 hm100n06f.pdf

HM100N06F HM100N06F

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

 7.1. Size:704K  cn hmsemi
 hm100n03.pdf

HM100N06F HM100N06F

HM100N03N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 7.2. Size:759K  cn hmsemi
 hm100n03k.pdf

HM100N06F HM100N06F

HM100N03KN-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 7.3. Size:428K  cn hmsemi
 hm100n03d.pdf

HM100N06F HM100N06F

HM100N03DDescription The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 7.4. Size:544K  cn hmsemi
 hm100n02k.pdf

HM100N06F HM100N06F

Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)

 7.5. Size:772K  cn hmsemi
 hm100n02.pdf

HM100N06F HM100N06F

HM100N02Description The HM100N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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