Справочник MOSFET. HM100N06F

 

HM100N06F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HM100N06F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 10.8 ns
   Cossⓘ - Выходная емкость: 440 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: TO-220F
     - подбор MOSFET транзистора по параметрам

 

HM100N06F Datasheet (PDF)

 ..1. Size:426K  cn hmsemi
 hm100n06f.pdf pdf_icon

HM100N06F

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

 7.1. Size:704K  cn hmsemi
 hm100n03.pdf pdf_icon

HM100N06F

HM100N03N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 7.2. Size:759K  cn hmsemi
 hm100n03k.pdf pdf_icon

HM100N06F

HM100N03KN-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 7.3. Size:428K  cn hmsemi
 hm100n03d.pdf pdf_icon

HM100N06F

HM100N03DDescription The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

ПОКАЗАТЬ ЕЩЁ

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History: VBZM40P06

 

 
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