HM100N15A
MOSFET. Datasheet pdf. Equivalent
Type Designator: HM100N15A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 370
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 138
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 640
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011
Ohm
Package:
TO-220
HM100N15A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM100N15A
Datasheet (PDF)
..1. Size:596K cn hmsemi
hm100n15a.pdf 
HM100N15AN-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =150V,ID =100A Schematic diagram RDS(ON)
6.1. Size:553K cn hmsemi
hm100n15.pdf
HM100N15 N-Channel Enhancement Mode Power MOSFET Description The HM100N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =140V,ID =100A RDS(ON)
8.1. Size:704K cn hmsemi
hm100n03.pdf
HM100N03N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)
8.2. Size:759K cn hmsemi
hm100n03k.pdf
HM100N03KN-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)
8.3. Size:428K cn hmsemi
hm100n03d.pdf
HM100N03DDescription The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)
8.4. Size:544K cn hmsemi
hm100n02k.pdf
Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)
8.5. Size:426K cn hmsemi
hm100n06f.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)
8.6. Size:556K cn hmsemi
hm100n20t.pdf
H N-Channel Enhancement Mode Power MOSFET Description The HM100N20T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =100A RDS(ON)
8.7. Size:772K cn hmsemi
hm100n02.pdf
HM100N02Description The HM100N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)
Datasheet: WPB4002
, FDM15-06KC5
, FQD2N60CTM
, FDM47-06KC5
, FDPF045N10A
, FMD15-06KC5
, FDMS8672S
, FMD21-05QC
, IRFP250N
, FDMS86368F085
, FMD47-06KC5
, FDBL86361F085
, FMK75-01F
, FMM110-015X2F
, FMM150-0075X2F
, FMM22-05PF
, FMM22-06PF
.
