HM100N15A MOSFET. Datasheet pdf. Equivalent
Type Designator: HM100N15A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 370 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 138 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 640 pF
Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm
Package: TO-220
HM100N15A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM100N15A Datasheet (PDF)
hm100n15a.pdf
HM100N15AN-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =150V,ID =100A Schematic diagram RDS(ON)
hm100n15.pdf
HM100N15 N-Channel Enhancement Mode Power MOSFET Description The HM100N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =140V,ID =100A RDS(ON)
hm100n03.pdf
HM100N03N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)
hm100n03k.pdf
HM100N03KN-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)
hm100n03d.pdf
HM100N03DDescription The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)
hm100n02k.pdf
Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)
hm100n06f.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)
hm100n20t.pdf
H N-Channel Enhancement Mode Power MOSFET Description The HM100N20T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =100A RDS(ON)
hm100n02.pdf
HM100N02Description The HM100N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: KNP2910A
